ds99181b(12/05) features ? international standard packages ? guaranteed short circuit soa capability ? low v ce(sat) - for low on-state conduction losses ? high current handling capability ? mos gate turn-on - drive simplicity ? fast fall time for switching speeds up to 20 khz applications ? ac motor speed control ? uninterruptible power supplies (ups) ? welding advantages ? high power density ixsa 20n60b2d1 ixsp 20n60b2d1 high speed igbt short circuit soa capability symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c35a i c110 t c = 110 c20a i f(110) 11 a i cm t c = 25 c, 1 ms 60 a ssoa v ge = 15 v, t j = 125 c, r g = 82 i cm = 32 a (rbsoa) clamped inductive load @ 0.8 v ces t sc v ge = 15 v, v ce = 360 v, t j = 125 c 10 s (scsoa) r g = 82 , non repetitive p c t c = 25 c 190 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c weight 2 g maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s maximum tab temperature for soldering for 10s 260 c symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 600 v v ge(th) i c = 750 a, v ce = v ge 3.5 6.5 v i ces v ce = v ces 85 a v ge = 0 v t j = 125 c 0.6 ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = 16a, v ge = 15 v 2.5 v preliminary data sheet v ces = 600 v i c25 = 35 a v ce(sat) = 2.5 v g = gate c = collector e = emitter tab = collector g c e to-220 (ixsp) c (tab) ? 2004 ixys all rights reserved c (tab) g c to-220 (ixsa)
ixsa 20n60b2d1 ixsp 20n60b2d1 reverse diode (fred) characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = 10a, v ge = 0 v t j =150 c 1.66 v 2.66 v i rm i f = 12a, v ge = 0 v, -di f /dt = 100 a/ s t j = 100 c 1.5 a t rr v r = 100 v t j = 100 c90 ns t rr i f = 1 a; -di/dt = 100 a/ s; v r = 30 v 30 ns r thjc 2.5 k/w symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 16a; v ce = 10 v, note 1 3.5 7.0 s c ies 800 pf c oes v ce = 25 v, v ge = 0 v 76 pf f = 1 mhz 20n60b2d1 90 pf c res 28 pf q g 33 nc q ge i c = 16a, v ge = 15 v, v ce = 0.5 v ces 12 nc q gc 12 nc t d(on) 30 ns t ri 30 ns t d(off) 116 ns t fi 126 ns e off 380 600 j t d(on) 30 ns t ri 30 ns e on 20n60b2 0.12 mj 20n60b2d1 0.42 mj t d(off) 180 ns t fi 210 ns e off 970 j r thjc 0.66 k/w r thcs 0.3 k/w inductive load, t j = 25 c i c = 16a, v ge = 15 v v ce = 0.8 v ces , r g = 10 switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g inductive load, t j = 125 c i c = 16 a, v ge = 15 v v ce = 0.8 v ces , r g = 10 switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g to-220 ab (ixsp) outline dim. millimeter inches min. max. min. max. a 12.70 13.97 0.500 0.550 b 14.73 16.00 0.580 0.630 c 9.91 10.66 0.390 0.420 d 3.54 4.08 0.139 0.161 e 5.85 6.85 0.230 0.270 f 2.54 3.18 0.100 0.125 g 1.15 1.65 0.045 0.065 h 2.79 5.84 0.110 0.230 j 0.64 1.01 0.025 0.040 k 2.54 bsc 0.100 bsc m 4.32 4.82 0.170 0.190 n 1.14 1.39 0.045 0.055 q 0.35 0.56 0.014 0.022 r 2.29 2.79 0.090 0.110 note 1: pulse test, t 300 s, duty cycle d 2 % ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2 dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029 to-263 (ixsa) outline
ixsa 20n60b2d1 ixsp 20n60b2d1 fig. 2. extended output characteristics @ 25 o c 0 10 20 30 40 50 60 70 0 2 4 6 8 101214161820 v c e - volts i c - amperes v ge = 17v 9v 11v 13v 15v fig. 3. output characteristics @ 125 o c 0 4 8 12 16 20 24 28 32 0.5 1 1.5 2 2.5 3 3.5 4 4.5 v ce - volts i c - amperes v ge = 17v 15v 7v 13v 9v 11v fig. 1. output characteristics @ 25 o c 0 4 8 12 16 20 24 28 32 0.5 1 1.5 2 2.5 3 3.5 4 v c e - volts i c - amperes v ge = 17v 15v 13v 7v 9v 11v fig. 4. dependence of v ce(sat) on temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v c e (sat) - normalize d i c = 16a i c = 8a v ge = 15v i c = 32a fig. 5. collector-to-em itter voltage vs. gate-to-em itter voltage 1 2 3 4 5 6 7 8 9 1011 12 1314 1516 17 1819 20 v g e - volts v c e - volts t j = 25 o c i c = 32a 16a 8a fig. 6. input adm ittance 0 10 20 30 40 50 60 6 7 8 9 10 11 12 13 14 15 16 v g e - volts i c - amperes t j = 125 o c 25 o c -40 o c
ixsa 20n60b2d1 ixsp 20n60b2d1 fig. 7. transconductance 0 1 2 3 4 5 6 7 8 9 0 102030405060 i c - amperes g f s - siemens t j = -40 o c 25 o c 125 o c fig. 8. dependence of turn-off energy loss on r g 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 10 20 30 40 50 60 70 80 90 100 r g - ohms e o f f - miiiljoules i c = 8a t j = 125 o c v ge = 15v v ce = 400v i c = 16a i c = 32a fig. 9. dependence of turn-off energy loss on i c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 8 1216 20242832 i c - amperes e o f f - miiiljoules r g = 10 ? v ge = 15v v ce = 400v t j = 125 o c t j = 25 o c fig. 10. dependence of turn-off energy loss on temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e o f f - millijoules i c = 32a r g = 10 ? v ge = 15v v ce = 400v i c = 16a i c = 8a fig. 11. dependence of turn-off sw itching time on r g 100 150 200 250 300 350 400 450 10 20 30 40 50 60 70 80 90 100 r g - ohms s w it c hi ng ti me - nanosecon d s i c = 8a t d(off) t fi - - - - - t j = 125 o c v ge = 15v v ce = 400v i c = 16a i c = 32a fig. 12. dependence of turn-off sw itching tim e on i c 60 80 100 120 140 160 180 200 220 240 260 8 121620242832 i c - amperes switching time - nanoseconds t d(off) t fi - - - - - r g = 10 ? v ge = 15v v ce = 400v t j = 125 o c t j = 25 o c
ixsa 20n60b2d1 ixsp 20n60b2d1 fig. 14. gate charge 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 q g - nanocoulombs v g e - volts v ce = 480v i c = 16a i g = 10ma fig. 15. capacitance 10 100 1,000 0 5 10 15 20 25 30 35 40 v c e - volts capacitance - p f c ies c oes c res f = 1 mhz fig. 13. dependence of turn-off sw itching time on temperature 80 100 120 140 160 180 200 220 240 260 280 300 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade switching time - nanoseconds i c = 32a t d( off) t fi - - - - - r g = 10 ? v ge = 15v v ce = 400v i c = 16a i c = 8a i c = 32a fig. 16. reverse-bias safe operating area 0 3 6 9 12 15 18 21 24 27 30 33 100 200 300 400 500 600 v c e - volts i c - amperes t j = 125 o c r g = 10 ? dv/dt < 10v/ns fig. 17. maximum transient thermal resistance 0.10 1.00 1 10 100 1,000 pulse width - milliseconds r ( t h ) j c - oc / w 0.50
ixsa 20n60b2d1 ixsp 20n60b2d1 ixys mosfets and igbts are covered by 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,381,025 6,162,665 6,306,728 b1 6,534,343 6,683,344 one or moreof the following u.s. patents: 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,486,715 6,259,123 b1 6,404,065 b1 6,583,505 6,710,405b2 ixys reserves the right to change limits, test conditions, and dimensions. fig. 20. peak reverse current i rm fig. 19. reverse recovery charge q r fig. 18. forward current i f versus v f fig. 21. dynamic parameters q r , i rm fig. 22. recovery time t rr versus -di f /dt fig. 23. peak forward voltage v fr and fig. 24. transient thermal resistance junction-to-case constants for z thjc calculation: ir thi (k/w) t i (s) 1 1.449 0.0052 2 0.5578 0.0003 note: fig. 18 to fig. 23 shows typical values 200 600 1000 0 400 800 40 60 80 100 0.00001 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 20 40 60 0.0 0.1 0.2 0.3 v fr di f /dt v 200 600 1000 0400800 0 2 4 6 8 10 100 1000 0 50 100 150 200 250 0123 0 5 10 15 20 25 30 i rm q r i f a v f -di f /dt -di f /dt a/ s a v nc a/ s a/ s t rr ns t fr z thjc a/ s s t vj = 150c t vj = 100c t vj = 25c i rm q r v fr t vj = 100c v r = 300 v t vj = 100c v r = 300 v t vj = 100c v r = 300 v dsep 8-06b t fr i f = 5 a i f = 10 a i f = 20 a i f = 5 a i f = 10 a i f = 20 a i f = 5 a i f = 10 a i f = 20 a t vj = 100c i f = 10 a
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